2SJ245L HITACHI [Hitachi Semiconductor], 2SJ245L Datasheet - Page 2

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2SJ245L

Manufacturer Part Number
2SJ245L
Description
SILICON P-CHANNEL MOS FET
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ245L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source breakdown
voltage
———————————————————————————————————————————–
Gate to source breakdown
voltage
———————————————————————————————————————————–
Gate to source leak current
———————————————————————————————————————————–
Zero gate voltage drain current
———————————————————————————————————————————–
Gate to source cutoff voltage
———————————————————————————————————————————–
Static drain to source on state
resistance
———————————————————————————————————————————–
Forward transfer admittance
———————————————————————————————————————————–
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————–
Turn–on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn–off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————–
Body–drain diode forward
voltage
———————————————————————————————————————————–
Body–drain diode reverse
recovery time
———————————————————————————————————————————–
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
Min
–60
±20
–1.0
————————————————————————–
2.2
Typ
0.2
0.28
3.7
610
315
95
12
45
170
90
–1.1
160
Max
±10
–100
–2.0
0.25
0.38
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
V
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I F = –5 A, V
diF / dt = 50 A / µs
D
G
D
D
D
D
D
F
GS
DS
GS
GS
DS
DS
GS
GS
L
= –5 A, V
= –10 mA, V
= –1 mA, V DS = –10 V
= –3 A
= –3 A
= –3 A
= –3 A
= ±100 µA, V
= 10
= ±16 V, V
= –50 V, V
= –10 V *
= –4 V *
= –10 V *
= –10 V
= 0
= –10 V
GS
GS
GS
GS
DS
= 0
= 0,
DS
= 0
= 0
= 0
= 0

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