2SJ130S HITACHI [Hitachi Semiconductor], 2SJ130S Datasheet - Page 3

• Manufacturer Part Number: 2SJ130S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

30
20
10
–2.0
–1.6
–1.2
–0.8
–0.4
0
0
Power vs. Temperature Derating
–15 V
Case Temperature T
Drain to Source Voltage V
Typical Output Characteristics
–10
50
–7 V
–20
–10 V
100
–30
V
C
GS
(°C)
Pulse Test
= –4 V
–6 V
–5 V
DS
–40
(V)
150
–50
–0.05
–1.0
–0.5
–0.2
–0.1
–2.0
–1.6
–1.2
–0.8
–0.4
–5
–2
0
–5
Ta = 25°C
V
Pulse Test
Drain to Source Voltage V
DS
Gate to Source Voltage V
–10
Typical Transfer Characteristics
Maximum Safe Operation Area
= –20 V
–2
–25°C
–20
2SJ130(L), 2SJ130(S)
–4
–50
–6
–100
T
75°C
GS
–200
DS
C
–8
= 25°C
(V)
(V)
–500
–10
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