SI5473DC-T1 VISHAY [Vishay Siliconix], SI5473DC-T1 Datasheet

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SI5473DC-T1

Manufacturer Part Number
SI5473DC-T1
Description
P-Channel 12-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
c.
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
i
DS
- 12
(V)
J
ti
t A bi
Ordering Information:
D
0.0335 @ V
a
0.045 @ V
1206-8 ChipFET
0.027 @ V
J
J
D
a
a
= 150_C)
= 150_C)
t
a
a
Bottom View
Parameter
r
D
Parameter
D
DS(on)
S
D
GS
GS
GS
a
a
= - 1.8 V
(W)
= - 4.5 V
D
= - 2.5 V
P-Channel 12-V (D-S) MOSFET
Si5473DC-T1
1
G
r
b, c
A
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
Steady State
Steady State
A
A
A
A
t v 5 sec
New Product
I
D
= 25_C
= 85_C
= 25_C
= 85_C
- 8.1
- 7.3
- 6.3
(A)
Marking Code
BI
XXX
Part #
Code
Symbol
T
Symbol
Lot Traceability
and Date Code
J
V
V
I
P
P
, T
I
I
DM
I
GS
R
R
R
DS
D
D
S
D
D
thJA
thJF
stg
FEATURES
D TrenchFETr Power MOSFETS
D Low r
APPLICATIONS
D Battery and Load Switch for Portable Devices
Compact Footprint
5 secs
Typical
- 8.1
- 5.9
- 2.1
2.5
1.3
DS(on)
40
80
15
G
P-Channel MOSFET
- 55 to 150
and Excellent Power Handling In
"20
260
- 12
"8
Steady State
D
S
Maximum
Vishay Siliconix
- 5.9
- 4.3
- 1.1
1.3
0.7
50
95
20
Si5473DC
www.vishay.com
Unit
Unit
_C/W
C/W
_C
_C
W
W
V
V
A
A
1

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SI5473DC-T1 Summary of contents

Page 1

... 0.0335 @ 2 0.045 @ 1 1206-8 ChipFET Bottom View Si5473DC-T1 Ordering Information: ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current a a Maximum Power Dissipation ...

Page 2

... Si5473DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72261 S-31265—Rev. A, 16-Jun-03 New Product 3000 2500 2000 1500 V = 2.5 V 1000 4 0.10 0.08 0.06 0.04 0.02 0.00 1.0 1.2 1.4 Si5473DC Vishay Siliconix Capacitance C iss C oss C 500 rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.2 1 ...

Page 4

... Si5473DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 D 0.2 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72261 S-31265—Rev. A, 16-Jun-03 New Product - Square Wave Pulse Duration (sec) Si5473DC Vishay Siliconix - www.vishay.com 5 ...

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