mds170l ETC-unknow, mds170l Datasheet
mds170l
Manufacturer Part Number
mds170l
Description
170 Watts, 36 Volts, Pulsed Avionics 1030/1090 Mhz
Manufacturer
ETC-unknow
Datasheet
1.MDS170L.pdf
(3 pages)
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ELECTRICAL CHARACTERISTICS @ 25 C
Initial Issue January, 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GENERAL DESCRIPTION
The MDS170L is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030 - 1090 MHz. The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. Low thermal resistance Solder Sealed Package reduces
junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
Maximum Voltage and Current
BVces
BVebo
Ic
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
SYMBOL
Pout
Pin
Pg
VSWR
BVebo
BVces
h
FE
c
jc
2
Note 1: MODE- S Pulse Burst, 120 s at 50% Duty, Long term duty = 5%.
Collector Current
Emitter to Base Voltage
Collector to Base Voltage
2: At rated pulse conditions
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
o
2
- 65 to + 200 C
F = 1030 - 1090 MHz
Vcc = 36 Volts
PW = Note 1
DF = Note 1
F = 1030 MHz
Ie = 20 mA
Ic = 20 mA
Ic = 20 mA, Vce = 5 V
TEST CONDITIONS
350 Watts
3.5 Volts
+ 200 C
50 Volts
15 Amps
o
o
170 Watts, 36 Volts, Pulsed
Avionics 1030/1090 MHz
O
MDS170L
MIN
170
20
7
CASE OUTLINE
55KT, STYLE 1
TYP
40
MAX
10:1
0.5
34
UNITS
Watts
Watts
Volts
Volts
o
C/W
dB
%
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