mds140l Microsemi Corporation, mds140l Datasheet

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mds140l

Manufacturer Part Number
mds140l
Description
140 Watts, 50 Volts Pulsed Avionics 1030 To 1090 Mhz
Manufacturer
Microsemi Corporation
Datasheet

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MDS140L
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Part Number:
MDS140L
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GENERAL DESCRIPTION
The MDS140L is a high power COMMON BASE bipolar transistor. It is designed
for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has
gold thin-film metallization and diffused ballasting for proven highest MTTF. The
transistor includes input and output prematch for broadband capability.
thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (P
Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (I
Temperatures
Storage Temperature
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS @ 25°C
FUNCTIONAL CHARACTERISTICS @ 25°C
SYMBOL
P
P
G
η
P
T
ψ
NOTES: 1. At rated output power, pulse conditions and MSC fixture
Rev. A : Oct. 2008
SYMBOL
I
BV
BV
I
h
θjc
EBO
CES
out
in
d
FE
c
r
p
1
1,2
CBO
CES
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
2. ELM Burst Pulse: 32us(On), 18us(Off), N=48, Period=23ms
CHARACTERISTICS
Emitter to Base Leakage
Collector to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
DC – Current Gain
Thermal Resistance
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Rise Time
Load Mismatch
C
)
Visit our web site at
EBO
d
CES
)
)
-65 to +150 °C
)
+200 °C
500 W (At rated pulse condition)
3.0 V
70 V
12 A
www.microsemi.com
F = 1030/1090 MHz
V
ELM Burst: 32us(On),
18us(Off), N=48,
Period=23ms
V
I
I
V
I
P
C
C
C
in
EB
CE
CC
TEST CONDITIONS
TEST CONDITIONS
= 20 mA
= 20 mA
= 1A, V
= 15.7W
= 3.0 V
= 50.0 V
= 50V
CE
Pulsed Avionics 1030 to 1090 MHz
= 5V
or contact our factory direct.
140 Watts, 50 Volts
MDS140L
Low
MIN
MIN
140
9.5
70
70
20
50
CASE OUTLINE
TYP
TYP
0.15
(Common Base)
55AW Style 1
MAX
MAX
15.7
100
4.5
3.0
0.5
2:1
UNITS
UNITS
°C/W
mA
mA
dB
dB
W
W
ns
%
V
V
-
-

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mds140l Summary of contents

Page 1

... GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. ...

Page 2

... Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at 12.00 11.00 10.00 9.00 8.00 7.00 1030MHz 6.00 1090MHz 5.00 0.0 50.0 16.5 19.0 80.0% 1030MHz 70.0% 1090MHz 60.0% 50.0% 40.0% 30.0% 20.0% 10.0% 0.0% 0.0 50.0 200.0 or contact our factory direct. www.microsemi.com MDS140L Gain 1030MHz 1090MHz 100.0 150.0 200.0 Output Pow Efficiency 1030MHz 1090MHz 100.0 150.0 200.0 Output Pow ...

Page 3

... MDS140L Test Circuit Component Designations and Values Part Description C01, C02 100pF Chip Capacitor (ATC 600F) C04 2200uF, 63V Electrolytic Capacitor R01 2.4Ω, 1/4W Radial Resistor, Length: 0.85″ M01 22 x 650 mils ( M03 340 x 170 mils ( M05 800 x 300 mils ( ...

Page 4

... Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at Typical Impedance Values Output DUT Matching Network (Ω) Z (Ω 3.13 – j4.53 1.83 – j0.92 2.58 – j3.45 1.37 – j1.12 > 140W OUT or contact our factory direct. www.microsemi.com MDS140L ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at or contact our factory direct. www.microsemi.com MDS140L ...

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