s-au82avl TOSHIBA Semiconductor CORPORATION, s-au82avl Datasheet - Page 2

• Manufacturer Part Number: s-au82avl
• Description: Toshiba Rf Power Amplifier Module
• Manufacturer: TOSHIBA Semiconductor CORPORATION

PACKAGE OUTLINE
Weight: 35 g
ELECTRICAL CHARACTERISTICS
Note 5:The output power is intended to follow the rating provided in Figure 1 in Note 2.
Note 6: Stability
range, and they are guaranteed only under those conditions. Even though it is guaranteed to be stable where VSWR is
at 3:1, the VSWR load over the operating frequency should be designed to be 50 Ω .At the same time, ensure that the
VSWR load does not deviate much from 50Ω even for a moment, nor deviate even a little from 50Ω continually. The
S-AU82AL is not intended for such operations, and proper operation under such conditions is not guaranteed due to the
possibilities of heat generation in the module and its applications.
JEDEC
JEITA
TOSHIBA
Measurements are performed under the conditions where VSWR is at 3:1 through all phases over the whole frequency
Frequency Range
Output Power
Power Gain
Total Efficiency
Input VSWR
Second Harmonic
Third Harmonic
Ruggedness
Stability
⑤
①
CHARACTERISTICS
① RF Input
④ RF Output
②
③
② V
⑤ GROUND(Flange)
GG
④
5-53P
—
—
SYMBOL
2nd HRM
3rd HRM
VSWRin
③ V
f
range
G
P
η
—
—
T
o
p
DD
V
V
Pi = 50 mW
Z
10.5 V ≤ V
(V
Pi = 50 mW
P
VSWR LOAD 20: 1 ALL PHASE (@ 2 s)
10.5 V ≤ V
(V
Pi = 50 mW
P
VSWR LOAD 3: 1 ALL PHASE
(Tc = 25°C,
L
DD
GG
o
o
Unit: mm
GG
GG
= 50 Ω
= 60 W (Adjusted via V
≤ 60 W (Adjusted via V
= 12.5 V
= 5 V
= V
= V
GGajs
GGajs
DD
DD
2
TEST CONDITION
≤ 16.5 V, 0 V ≤ V
≤ 16.5 V, 0 V ≤ V
@ Po = 60 W)
@ Po = 60 W)
Z
G
—
= 50Ω
GG
GG
@ Z
@ Z
)
GG
GG
L
L
≤ V
≤ V
= 50Ω)
= 50Ω)
GGajs
GGajs
MIN
30.7
378
60
40
—
—
—
of -60 dB or greater
No spurious output
No Damage
TYP.
—
—
—
—
—
—
—
S-AU82AVL
2007-06-21
MAX
440
3.0
-30
-30
—
—
—
UNIT
MHz
dB
dB
dB
—
—
—
W
%