SI1433DH-T1 VISHAY [Vishay Siliconix], SI1433DH-T1 Datasheet - Page 2

• Manufacturer Part Number: SI1433DH-T1
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si1433DH
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
7
6
5
4
3
2
1
0
0
b
Parameter
1
V
DS
a
a
Output Characteristics
- Drain-to-Source Voltage (V)
a
2
V
GS
a
a
J
= 10 thru 5 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
4 V
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
SD
t
t
fs
gs
gd
r
f
g
4
3 V
5
New Product
V
DS
I
V
D
DS
^ - 1 A, V
= - 15 V, V
V
V
= - 16 V, V
V
V
V
V
V
V
V
DS
DS
GS
I
DS
GS
DS
S
DS
DD
DD
Test Condition
= - 1.2 A, V
= 0 V, V
= - 5 V, V
= - 4.5 V, I
= V
= - 10 V, I
= - 10 V, I
= - 16 V, V
= - 15 V, R
= - 15 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, I
GS
= - 10 V, R
D
= 0 V, T
GS
D
D
D
= - 100 mA
GS
= "8 V
GS
L
L
= - 2.2 A
= - 2.2 A
= - 1.6 A
= - 4.5 V
= 15 W
= 15 W
= 0 V
= 0 V
J
D
8
7
6
5
4
3
2
1
0
G
= 85_C
= - 2.2 A
0
= 6 W
V
1
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
- 1
- 4
2
0.120
0.210
Typ
- 0.85
3.1
1.0
1.6
11
17
18
13
4
S-31668—Rev. A, 11-Aug-03
3
Document Number: 72323
T
25_C
C
= - 55_C
"100
Max
0.150
0.260
- 1.2
17
26
27
20
- 3
- 1
- 5
5
4
125_C
Unit
nA
mA
mA
nC
ns
ns
V
A
W
W
S
V
5