SI1032R-T1 VISHAY [Vishay Siliconix], SI1032R-T1 Datasheet - Page 4

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SI1032R-T1

Manufacturer Part Number
SI1032R-T1
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Si1032R/X
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4
TYPICAL CHARACTERISTICS (T
−0.0
−0.1
−0.2
−0.3
0.3
0.2
0.1
−50
0.01
0.1
Threshold Voltage Variance vs. Temperature
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1032R Only)
T
J
− Temperature (_C)
10
25
Single Pulse
−3
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
75
−50
10
A
−2
100
= 25_C UNLESS NOTED)
−25
Square Wave Pulse Duration (sec)
125
BV
0
T
GSS
J
− Temperature (_C)
10
vs. Temperature
−1
25
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
100
−25
125
V
GS
= 2.8 V
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
I
P
0
GSS
T
DM
J
JM
− Temperature (_C)
− T
vs. Temperature
t
25
A
1
= P
t
2
DM
Z
50
S-40574—Rev. C, 29-Mar-04
thJA
100
thJA
t
t
Document Number: 71172
1
2
(t)
= 500_C/W
75
100
600
125

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