SI4955DY-T1-E3 VISHAY [Vishay Siliconix], SI4955DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4955DY-T1-E3
• Description: Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
• Manufacturer: VISHAY [Vishay Siliconix]

CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
T
0
J
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
J
- Temperature (°C)
25
I
D
0.6
50
= 250 µA
75
0.8
0.01
100
0.1
T
10
J
1
100
= 25 °C
0.1
1.0
r
125
DS(on)
Limited
I
D(on)
Single Pulse
T
V
Limited
A
150
DS
1.2
= 25 °C
- Drain-to-Source Voltage (V)
Safe Operating Area
1
BV
DSS
I
DM
Limited
Limited
10
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
10 -
0
3
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10 -
1
100
2
V
GS
Single Pulse Power
- Gate-to-Source Voltage (V)
10 -
1
Time (sec)
2
I
D
= 7 A
Vishay Siliconix
1
3
Si4955DY
10
www.vishay.com
4
100
600
5
7