SI4925BDY-E3 VISHAY [Vishay Siliconix], SI4925BDY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4925BDY-E3
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4925BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
0.01
100
10
0.1
100
10
1
−2
0.1
125
Limited
*V
I
D(on)
Limited
*r
Single Pulse
GS
DS(on)
T
Square Wave Pulse Duration (sec)
A
u minimum V
150
= 25_C
V
DS
Safe Operating Area
10
− Drain-to-Source Voltage (V)
1
−1
GS
BV
at which r
DSS
Limited
10
DS(on)
1
30
25
20
15
10
I
5
0
DM
10
is specified
−2
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
S-50366—Rev. C, 28-Feb-05
t
t
1
2
(t)
Document Number: 72001
10
= 85_C/W
100
600
600