SI4736DY VISHAY [Vishay Siliconix], SI4736DY Datasheet - Page 2
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SI4736DY
Manufacturer Part Number
SI4736DY
Description
N-Channel 30-V (D-S) MOSFET With Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI4736DY.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4736DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4736DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SPICE Device Model Si4736DY
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Schottky Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
I
I
DS
D
S
= 3 A, V
≅ 1 A, V
= 15 V, V
I
F
V
V
V
V
V
V
Test Condition
= 3 A, di/dt = 100 A/μs
DS
DD
GS
DS
I
GS
DS
S
= V
= 3 A, V
= 15 V, R
≥ 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
= 0 V, T
, I
= 10 V, R
= 4.5 V, I
D
GS
GS
= 250 μA
D
D
D
L
= 13 A
= 13 A
= 0 V
= 10 V
= 12 A
= 15 Ω
J
= 125°C
G
D
= 6 Ω
= 13 A
Simulated
0.0079
0.0090
Data
0.61
0.76
596
1.1
8.8
62
37
10
17
83
37
34
6
Measured
S-51870⎯Rev. B, 12-Sep-05
0.0070
0.0083
Data
0.495
0.43
102
8.8
56
37
10
17
14
26
42
Document Number: 71012
Unit
nC
ns
Ω
V
A
S
V