SI4490DY-T1 VISHAY [Vishay Siliconix], SI4490DY-T1 Datasheet
SI4490DY-T1
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SI4490DY-T1 Summary of contents
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... Top View Ordering Information: Si4490DY Si4490DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction) ...
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... Si4490DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71341 S-03951—Rev. B, 26-May-03 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4490DY Vishay Siliconix Capacitance C iss 500 C rss C oss 120 V - Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 4 2.0 1 ...
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... Si4490DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.5 = 250 0.0 -0.5 -1.0 -1.5 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 125 ...