SI4463BDY-E3 VISHAY [Vishay Siliconix], SI4463BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4463BDY-E3
• Description: P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72789
S-40433—Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.04
0.03
0.02
0.01
0.00
50
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
5
= 13.7 A
0.2
On-Resistance vs. Drain Current
= 10 V
V
10
GS
V
T
SD
10
Q
J
= 2.5 V
= 150_C
g
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
15
− Drain Current (A)
Gate Charge
20
0.6
20
30
25
T
0.8
J
V
= 25_C
V
GS
GS
30
= 4.5 V
40
= 10 V
1.0
35
1.2
50
40
New Product
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
−50
I
D
0
0
= 5 A
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
C
GS
1
rss
= 13.7 A
= 10 V
4
T
V
V
2
0
J
GS
DS
− Junction Temperature (_C)
C
oss
− Gate-to-Source Voltage (V)
I
− Drain-to-Source Voltage (V)
D
25
3
= 13.7 A
Capacitance
8
Vishay Siliconix
50
4
12
Si4463BDY
75
5
C
iss
100
6
16
www.vishay.com
125
7
150
20
8
3