SI4425BDY-E3 VISHAY [Vishay Siliconix], SI4425BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4425BDY-E3
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72000
S-50366—Rev. D, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
10
Source-Drain Diode Forward Voltage
V
= 12 A
0.2
GS
On-Resistance vs. Drain Current
= 15 V
10
V
= 4.5 V
T
SD
20
Q
J
g
= 150_C
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
D
30
− Drain Current (A)
Gate Charge
20
0.6
40
30
50
0.8
V
GS
60
= 10 V
T
40
J
= 25_C
1.0
70
1.2
50
80
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
−25
D
rss
GS
= 12 A
= 10 V
2
6
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
C
25
Capacitance
oss
12
4
I
D
Vishay Siliconix
= 12 A
50
C
18
6
Si4425BDY
iss
75
100
24
www.vishay.com
8
125
150
10
30
3