SI4403BDY-T1 VISHAY [Vishay Siliconix], SI4403BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4403BDY-T1
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72268
S-31412—Rev. A, 07-Jul-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.08
0.06
0.04
0.02
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.9 A
0.2
V
On-Resistance vs. Drain Current
= 10 V
GS
6
7
V
SD
= 1.8 V
Q
g
T
- Source-to-Drain Voltage (V)
I
0.4
J
D
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
12
14
0.6
18
21
0.8
T
V
V
J
GS
GS
= 25_C
= 2.5 V
= 4.5 V
24
28
1.0
1.2
30
35
New Product
4000
3500
3000
2500
2000
1500
1000
0.08
0.06
0.04
0.02
0.00
500
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
= 3.1 A
rss
GS
= 9.9 A
= 4.5 V
1
4
T
V
V
0
C
J
GS
DS
oss
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
I
D
Vishay Siliconix
50
= 9.9 A
C
iss
12
3
Si4403BDY
75
100
16
www.vishay.com
4
125
150
20
5
3