IRLI520 IRF [International Rectifier], IRLI520 Datasheet - Page 2

• Manufacturer Part Number: IRLI520
• Description: Power MOSFET
• Manufacturer: IRF [International Rectifier]

Notes:
IRLI520N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
I
I
V
t
Q
t
DSS
SM
GSS
d(on)
d(off)
S
rr
on
r
f
V
fs
D
S
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
rr
I
g
gs
gd
T
Repetitive rating; pulse width limited by
R
SD
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
J
G
= 25 , I
175°C
6.0A, di/dt
/ T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 4.7mH
AS
= 6.0A. (See Figure 12)
340A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
3.1
–––
–––
–––
–––
–––
–––
–––
Uses IRL520N data and test conditions
Pulse width
t=60s, ƒ=60Hz
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.11 –––
4.5
–––
–––
–––
110
410
–––
––– 0.18
––– 0.22
––– 0.26
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
7.5
440
50
40
35
23
22
97
12
–––
–––
–––
160
620
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.3
2.0
4.6
25
20
10
8.1
35
300µs; duty cycle
V/°C
nH
pF
nC
µA
nA
nC
ns
ns
V
V
S
A
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 6.0A
= 6.0A
= 25°C, I
= 25°C, I
= 11
= 8.2
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V, See Fig. 6 and 13
= 50V
= 0V
2%.
GS
, I
V
D
See Fig. 10
S
F
D
D
GS
D
Conditions
= 250µA
D
D
GS
Conditions
= 6.0A
= 6.0A, V
= 250µA
= 6.0A
= 6.0A
GS
= 6.0A
= 5.0A
= 5.0V
= 0V, T
= 0V
D
= 1mA
GS
J
= 150°C
G
= 0V
G
S
+L
D
D
S
)
S
D