IRL2203 IRF [International Rectifier], IRL2203 Datasheet - Page 2

• Manufacturer Part Number: IRL2203
• Description: Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A?)
• Manufacturer: IRF [International Rectifier]

Source-Drain Ratings and Characteristics
IRL2203N
Electrical Characteristics @ T
Notes:
R
L
V
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
E
I
I
I
V
t
Q
t
DSS
d(on)
r
d(off)
f
SM
GSS
S
rr
on
D
V
fs
S
2
DS(on)
(BR)DSS
GS(th)
AS
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Static Drain-to-Source On-Resistance
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C, L = 0.16mH
AS
= 60A, V
GS
Parameter
Parameter
=10V (See Figure 12)
J
= 25°C (unless otherwise specified)
I
Pulse width
This is a typical value at device destruction and represents
T
This is a calculated value limited to T
operation outside rated limits.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1320 290
SD
Min. Typ. Max. Units
1.0
–––
–––
Min. Typ. Max. Units
30
73
–––
–––
–––
–––
–––
J
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
60A, di/dt
0.029 –––
3290 –––
1270 –––
4.5
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
160
7.5
170
–––
–––
–––
110
11
23
66
56
116
–––
–––
–––
–––
–––
250
100
–––
–––
–––
–––
–––
170
7.0
1.2
400µs; duty cycle
10
25
60
14
33
400
84
110A/µs, V
V/°C
m
mJ
µA
nA
nC
nH
nC
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
AS
DD
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
J
J
= 60A
= 60A
= 25°C, I
= 25°C, I
= 60A, L = 0.16mH
= 1.8
= V
= 25V, I
= 30V, V
= 24V, V
= 24V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V, See Fig. 6 and 13
= 15V
= 4.5V, See Fig. 10
= 0V
V
2%.
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
Conditions
= 60A
= 60A, V
,
= 250µA
= 60A
= 60A
= 48A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V
G
G
S
+L
D
S
D
)
S
D