IRF830FP SUNTAC [Suntac Electronic Corp.], IRF830FP Datasheet - Page 2

• Manufacturer Part Number: IRF830FP
• Description: POWER MOSFET
• Manufacturer: SUNTAC [Suntac Electronic Corp.]

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-Forward
Gate-Source Leakage Current-Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Internal Drain Inductance
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
Diode Forward Voltage
P
(V
(V
(V
(V
(V
(Measured from the drain lead 0.25” from package to center of die)
(Measured from the source lead 0.25” from package to source bond pad)
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) V
(3)
** Negligible, Dominated by circuit inductance
GS
DS
gsf
gsr
DS
= 500V, V
= 20 V, V
= -20 V, V
= V
= 0 V, I
Pulse.Test:.
DD
GS
, I
= 100V, V
D
D
= 250
= 250
DS
GS
DS
= 0 V)
= 0 V)
= 0 V)
Duty Cycle
GS
A)
A)
= 10V, L=10mH, I
DS
J
Characteristic
= 15V, I
2% , Pulse.Width
= 25 .
GS
= 10 V, I
D
I
= 2.5 A) (Note 3)
F
AS
R
= 5A, di/dt = 100A/µs , T
G
= 5A, R
= 9.1 , V
(V
(V
D
(V
V
DS
DD
I
GS
= 2.7A) (Note 3)
S
DS
= 5A, V
= 25 V, V
f = 1.0 MHz)
= 250 V, I
G
= 10 V) (Note 3)
= 400V, I
= 25
300µs
GS
= 10 V) (Note 3)
GS
GS
D
= 0 V
D
= 5 A,
= 0 V,
= 5A
J
= 25
Symbol
V
V
R
I
I
(BR)DSS
C
t
t
I
GSSF
GSSR
g
C
C
Q
Q
V
GS(th)
d(on)
d(off)
Q
Q
DSS
L
L
t
DS(on)
t
t
t
on
FS
oss
rr
SD
iss
rss
r
f
gs
gd
D
S
g
rr
Min
500
2.0
2.8
CIRF830
P
OWER
Typ
520
170
415
7.0
9.0
4.5
7.5
1.8
11
20
10
10
**
2
3
Max
-100
1.5
100
730
240
MOSFET
4.0
1.5
25
20
10
20
40
20
IRF830
Page 2
Units
mhos
nC
nC
nC
nH
nH
µC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
A