SI2312 HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.], SI2312 Datasheet - Page 2

• Manufacturer Part Number: SI2312
• Description: 20 V N-Channel Enhancement Mode MOSFET
• Manufacturer: HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

20V N-Channel Enhancement Mode MOSFET
JinYu
semiconductor
２
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
ELECTRICAL CHARACTERISTICS
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
R
R
R
Symbol
BV
V
t
t
C
I
I
C
Q
Q
C
V
DS(on)
DS(on)
DS(on)
GS(th)
d(on)
d(off)
Q
www.htsemi.com
DSS
GSS
g
I
t
t
oss
SD
iss
rss
S
DSS
fs
gs
gd
r
f
g
V
V
V
V
Test Cond ition
V
V
I
V
V
V
V
D
I
V
DS
GS
GS
GS
GS
GS
S
DS
DS
DS
DD
= 1A, V
DS
= 1.8A, V
=V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 0V, I
= ± 8V, V
= 20V, V
= 15V, I
= 10V, I
f = 1.0 MHz
= 10V, RL=10Ω
V
= 8V, V
GS
GS
R
G
, I
= 4.5V
= 6
GEN
D
D
D
D
GS
= 250uA
GS
D
D
D
= 250uA
GS
DS
= 5.0A
= 5.0A
= 5.0A
= 4.5A
= 4.0A
= 4.5V
= 0V
= 0V
= 0V
= 0V
Min.
0.4
20
21.0
24.0
50.0
11.2
500
300
140
1.4
2.2
Typ.
15
40
48
40
31
± 100
31.0
37.0
85.0
Miax.
1.7
1.2
14
25
60
70
45
1
1
Ｄａｔｅ：２０１１／０５
SI2312
m
uA
nA
nC
pF
Unit
ns
A
V
V
S
V