rf2125p RF Micro Devices, rf2125p Datasheet
rf2125p
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rf2125p Summary of contents
Page 1
... PCS Communication Systems • Digital Communication Systems • DECT Cordless Applications Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF ...
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... RF2125P Absolute Maximum Ratings Parameter Supply Voltage ( Power Control Voltage ( Supply Current Input RF Power 2 Output Load VSWR Operating Ambient Temperature Storage Temperature Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency ...
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... RF output OUT Same as pin OUT Same as pin OUT Same as pin 5. Pkg GND Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device Base may be required. Rev A4 010720 RF2125P Interface Schematic 2 2-69 ...
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... RF2125P 3 0. 2-70 Applicat ion Schemat ic 1880MHz Operat ion 4 BIAS CIRCUIT 4 5 PACKAGE BASE 0 OUT 2 100 pF Rev A4 010720 ...
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... Capacitors are ATC type. The 2.7 pF capacitor is 2 parallel with 0.3 pF. APPLICATION C1 (pF) C2 (pF) DCS1800 3.3 (1710 to 1785 MHz) DECT 3.0 (1880 to 1990 MHz) Broadband and 3.6 Unlicensed PCS (1850 to 1910 MHz) Broadband and 3.0 Unlicensed PCS (1910 to 1970 MHz) RF2125P C4 RF OUT See Chart See Chart C3 (pF) C4 (pF) 7.5 3.6 3.9 3.9 2.7 3.6 4.3 2.4 3.9 3 ...
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... RF2125P 2 2-72 Evaluation Board Layout 1.0” x 1.5” Board Thickness 0.031”; Board Material FR-4 Rev A4 010720 ...