SC221 POLYFET [Polyfet RF Devices], SC221 Datasheet
SC221
Manufacturer Part Number
SC221
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer
POLYFET [Polyfet RF Devices]
Datasheet
1.SC221.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SC221
Manufacturer:
POLYFET
Quantity:
20 000
low feedback and output capacitances,
resulting in high F transistors with high
input impedance and high efficiency.
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
General Description
SYMBOL
SYMBOL
"Polyfet"
Silicon VDMOS and LDMOS
gM
VSWR
Rdson
Idsat
Ciss
Gps
Idss
Igss
Coss
Vgs
Crss
η
Bvdss
Dissipation
20
Device
Watts
Total
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com
TM
PARAMETER
PARAMETER
Common Source Input Capacitance
Common Source Output Capacitance
Common Source Power Gain
Load Mismatch Tolerance
Zero Bias Drain Current
Gate Leakage Current
Common Source Feedback Capacitance
Saturation Current
Drain Efficiency
Gate Bias for Drain Current
Saturation Resistance
Drain Breakdown Voltage
Forward Transconductance
process features
t
Case Thermal
10.00 C/W
polyfet rf devices
Resistance
Junction to
o
Temperature
RF CHARACTERISTICS (
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
ABSOLUTE MAXIMUM RATINGS ( T =
Maximum
Junction
200
o
C
-65 C to 150 C
POLYFET RF DEVICES
Temperature
MIN
MIN
o
2
10
40
Storage
TYP
TYP
o
50
2.00
2.30
0.2
9.0
0.3
8.0
DC Drain
2.0
Current
MAX
MAX
20:1
1
5
0.2
0.8
WATTS OUTPUT )
SILICON GATE ENHANCEMENT MODE
A
UNITS TEST CONDITIONS
Relative
UNITS TEST CONDITIONS
Ohm
Mho
Amp
RF POWER
mA
dB
pF
pF
uA
pF
%
V
V
HIGH EFFICIENCY, LINEAR
25 C )
HIGH GAIN, LOW NOISE
Drain to
o
Voltage
Idq =
Idq =
Idq = 0.20
50
Gate
ROHS COMPLIANT
Ids =
V
Ids =
Vds =
Vds =
Vds =
Vds =
Package Style
Vgs = 20V, Ids =
Vds = 0V Vgs = 30V
Vds = 10V, Vgs = 5V
Vgs = 20V, Vds = 10V
2.0
0.20
0.20
0.02
REVISION 09/11/2007
Watts
12.5
VDMOS
10.00
12.5
12.5
12.5
A, Vds =
A, Vds =
A, Vds =
A, Vgs = Vds
V, Vgs = 0V
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
Vgs = 0V, F = 1 MHz
mA, Vgs = 0V
Drain to
Voltage
Source
50
Single Ended
V
1.60
12.5
12.5
12.5
TRANSISTOR
AC
A
V, F =
V, F =
V, F =
SC221
Voltage
Gate to
Source
30
850
850
850
V
MHz
MHz
MHz
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SC221 Summary of contents
Page 1
... Mho Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = Amp Vgs = 20V, Vds = 10V 12.5 Vgs = 0V MHz pF Vds = 12.5 Vgs = 0V MHz Vds = pF 12.5 Vgs = 0V MHz Vds = pF REVISION 09/11/2007 SC221 TRANSISTOR AC Gate to Source Voltage MHz 12 850 12 850 MHz 12 850 MHz 1 ...
Page 2
... POUT VS PIN GRAPH SC221 Pout/Gain vs Pin Freq=850Mhz, Vds=12.5Vdc, Idq=.2A 3.2 P1dB = 2.3 watts 2.8 2.4 2 1.6 1.2 Efficiency@2.5W = 56% 0.8 0 0.1 0.2 0.3 PIN IN WATTS IV CURVE S2C Die 1 IV CURVE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 VDS IN VOLTS vg=2v Vg=4v Vg=6v vg=8v Zin Zout 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com ...