T410-600BTR STMICROELECTRONICS [STMicroelectronics], T410-600BTR Datasheet - Page 4

• Manufacturer Part Number: T410-600BTR
• Description: 4A TRIACS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

T4 Series
4/8
6
5
4
3
2
1
0
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-
ness: 35µm),full cycle.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
P(W)
-40
0
IT(RMS)(A)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
IH & IL
0.5
-20
IGT
25
1.0
0
20
1.5
IT(RMS)(A)
50
Tamb(°C)
40
Tj(°C)
2.0
60
75
2.5
80
3.0
100
100
(S=0.5cm²)
3.5
120
DPAK
125
140
4.0
1E+0
35
30
25
20
15
10
Fig. 2-1: RMS on-state current case versus tem-
perature (full cycle).
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 5: Surge peak on-state current versus
number of cycles.
1E-1
1E-2
5
0
1
ITSM(A)
0
1E-2
IT(RMS)(A)
K=[Zth/Rth]
TO-220AB/DPAK/IPAK
Repetitive
Tc=110°C
25
1E-1
Rth(j-c)
Non repetitive
Tj initial=25°C
10
Number of cycles
ISOWATT220AB
50
1E+0
Tc(°C)
tp(s)
DPAK/IPAK
TO-220AB/DPAK/IPAK
75
1E+1
ISOWATT220AB
100
TO-220AB/ISOWATT220AB
100
1E+2
Rth(j-a)
t=20ms
One cycle
5E+2
1000
125