BTB24-700B STMICROELECTRONICS [STMicroelectronics], BTB24-700B Datasheet - Page 2

• Manufacturer Part Number: BTB24-700B
• Description: STANDARD TRIACS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Fig. 1: Maximum power dissipation versus RMS
on-state current.
THERMAL RESISTANCES
GATE CHARACTERISTICS (maximum values)
P G (AV) = 1W
ELECTRICAL CHARACTERISTICS
* For either polarity of electrode A 2 voltage with reference to electrode A 1 .
35
30
25
20
15
10
2/4
Rth (j-c) DC Junction to case for DC
5
0
Rth (j-c) AC Junction to case for 360 conduction angle ( F= 50 Hz)
(dV/dt)c *
0
Symbol
P(W)
dV/dt *
Rth (j-a)
Symbol
V TM *
I DRM
I RRM
V GT
V GD
I H *
I GT
= 30°
I L
5
V D =12V
V D =12V
V D =V DRM R L =3.3k
I G =1.2 I GT
I T = 500mA gate open
I TM = 35A tp= 380 s
V DRM Rated
V RRM Rated
Linear slope up to V D =67%V DRM
gate open
(dI/dt)c = 11.1A/ms
Junction to ambient
= 60°
P GM = 10W (tp = 20 s)
10
(DC) R L =33
(DC) R L =33
= 90°
IT(rms)(A)
15
Test Conditions
= 120°
Parameter
20
= 180°
I GM = 4A (tp = 20 s)
180°
25
Tj=125 C
Tj=125 C
Tj=125 C
Tj=125 C
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (T amb and
T case ) for different thermal resistances heatsink +
contact.
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
10
35
30
25
20
15
5
0
P(W)
0
= 180°
Rth=3°C/W
20
V GM = 16V (tp = 20 s).
Quadrant
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
I-II-III
40
Rth=2°C/W
IV
II
60
Tamb(°C)
Rth=1°C/W
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MIN
MIN
MIN
80
Value
1.1
1.5
60
100
Rth=0°C/W
Suffix
100
150
750
1.3
0.2
1.6
50
70
50
10
5
5
2
120
Tcase (°C)
140
Unit
V/ s
V/ s
Unit
C/W
C/W
C/W
mA
mA
mA
mA
V
V
V
A
100
110
120
90
125