at-33225 ETC-unknow, at-33225 Datasheet - Page 2

• Manufacturer Part Number: at-33225
• Description: Common Emitter Output Power Transistor Amps, Etacs Phones
• Manufacturer: ETC-unknow

AT-33225 Absolute Maximum Ratings
Electrical Specifications, T
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (ETACS/ISM).
Symbol
Symbol
P
IMD
BV
BV
BV
h
I
CEO
V
V
V
FE
T
out
C
P
I
T
EBO
CBO
CEO
STG
EBO
CBO
CEO
C
T
j
3
Freq. = 900 MHz, V
unless otherwise specified
Output Power
Collector Efficiency
3rd Order Intermodulation Distortion, 2 Tone Test,
P
Mismatch Tolerance, No Damage
Emitter-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Forward Current Transfer Ratio
Collector Leakage Current
out
each Tone = +24 dBm
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
[1]
Parameters and Test Conditions
CE
= 4.8 V, I
[1]
[2]
C
[1]
= 25 C
CQ
= 6 mA, CW operation, Test Circuit A,
[1]
Units
mA
W
V
V
V
C
C
I
E
4-72
any phase, 2 sec duration
I
= 0.4 mA, open collector
C
I
= 2.0 mA, open emitter
C
V
Maximum
= 10.0 mA, open base
Absolute
CE
-65 to 150
= 3 V, I
16.0
640
150
1.4
9.5
1.6
P
P
P
out
F1 = 899 MHz
F2 = 901 MHz
in
in
= +31 dBm
= +22 dBm
= +22 dBm
C
[1]
= 180 mA
V
CEO
= 5 V
Notes:
1. Permanent damage may occur if
2. Derate at 25 mW/ C for T
3. Using the liquid crystal technique,
any of these limits are exceeded.
T
of the collector pin 4, where the
lead contacts the circuit board.
V
1- 2 m “hot-spot” resolution.
c
CE
is defined to be the temperature
Units
Thermal Resistance
= 4.5 V, I
dBm
dBc
—
%
V
V
V
A
jc
+30.0 +31.0
c
Min.
16.0
= 40 C/W
= 100 mA, T
1.4
9.5
60
80
Typ. Max.
150
-29
70
C
j
> 85 C.
=150 C,
[3]
330
:
7:1
30