MMDT5451_1 DIODES [Diodes Incorporated], MMDT5451_1 Datasheet

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MMDT5451_1

Manufacturer Part Number
MMDT5451_1
Description
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
Maximum Ratings, PNP 5401 Section
Maximum Ratings, NPN 5551 Section
Features
·
·
·
·
·
·
Mechanical Data
Notes:
DS30171 Rev. 8 - 2
·
·
·
·
·
·
·
·
·
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Complementary Pair
One 5551-Type NPN,
One 5401-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking (See Page 3): KNM
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
2. Maximum combined dissipation.
3. No purposefully added lead.
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
www.diodes.com
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
@ T
@ T
K
J
A
A
1 of 5
= 25°C unless otherwise specified
= 25°C unless otherwise specified
E
E
Symbol
T
Symbol
T
1
2
V
V
V
j
, B
, B
R
, T
V
V
V
j
C
E
R
, T
P
2
2
CBO
CEO
EBO
I
P
qJA
CBO
CEO
EBO
I
C
qJA
C
d
1
2
STG
d
STG
, C
, C
C
E
A
B
B
G
H
2
2
1
2
1
2
D
= PNP5401 Section
= NPN5551 Section
B
B
E
C
1
2
1
1
F
C
E
B C
1
1
L
COMPLEMENTARY NPN / PNP
-55 to +150
-55 to +150
NPN5551
PNP5401
180
160
200
200
625
-160
-150
-200
6.0
-5.0
200
625
SPICE MODEL: MMDT5451
M
MMDT5451
All Dimensions in mm
Dim
M
A
B
C
D
F
H
K
L
J
SOT-363
Diodes Incorporated
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
0.65 Nominal
Min
Unit
K/W
mW
Unit
mA
mW
K/W
¾
°C
mA
V
V
V
°C
V
V
V
MMDT5451
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25

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MMDT5451_1 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation purposefully added lead. DS30171 Rev ...

Page 2

Electrical Characteristics, NPN 5551 Section Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL ...

Page 3

... Ordering Information (Note 5) Device MMDT5451-7-F Notes: 5. For Packaging Details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 J K Code Month Jan Feb 1 2 Code 200 150 100 100 125 AMBIENT TEMPERATURE (°C) A Fig. 1, Max Power Dissipation vs ...

Page 4

100 COLLECTOR CURRENT (mA) C Fig. 5, Gain Bandwidth Product vs. Collector Current (NPN5551) 10,000 1000 T = 150°C A 100 T = 25°C A ...

Page 5

Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application ...

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