MMDT4413_1 DIODES [Diodes Incorporated], MMDT4413_1 Datasheet - Page 2

• Manufacturer Part Number: MMDT4413_1
• Description: COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics, NPN 4401 Section
Electrical Characteristics, PNP 4403 Section
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30121 Rev. 8 - 2
4.
Characteristic
Characteristic
Short duration pulse test used to minimize self-heating effect.
Symbol
Symbol
V
V
V
V
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
(BR)EBO
CE(SAT)
BE(SAT)
I
I
h
C
C
h
C
C
h
h
I
h
h
h
I
h
h
h
CEX
CEX
f
t
t
f
t
t
BL
t
t
BL
t
t
FE
oe
T
FE
oe
T
cb
eb
re
fe
d
r
s
cb
eb
re
fe
d
r
s
ie
f
ie
f
www.diodes.com
-0.75
0.75
Min
100
250
Min
-5.0
6.0
1.0
0.1
1.0
100
100
200
-40
-40
60
40
20
40
80
40
40
1.5
0.1
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
30
60
20
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 5
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
-0.40
-0.75
-0.95
-1.30
-100
-100
Max
0.40
0.75
0.95
Max
100
100
300
500
225
300
500
100
225
1.2
6.5
8.0
8.5
8.0
30
15
30
15
20
30
30
15
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
x 10
x 10
Unit
MHz
MHz
Unit
nA
nA
pF
pF
kΩ
μS
nA
nA
kΩ
μS
⎯
⎯
ns
ns
ns
ns
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
V
V
V
V
V
-4
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
I
C
C
E
C
C
C
C
C
C
C
C
C
I
B1
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= 150mA, I
= -150mA, I
= 100μA, I
= -100μA, I
= 100μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= -100μA, I
= -1.0mA, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -150mA, V
= -500mA, V
= -500mA, I
= -150mA, I
= -500mA, I
= I
= I
= 35V, V
= 35V, V
= 10V, I
= -35V, V
= -35V, V
= -10V, I
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= -10V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -10V, I
= 30V, I
= 30V, I
= -30V, I
= -30V, I
B2
B2
= 2.0V, I
= -2.0V, I
= 15mA
= -15mA
C
Test Condition
C
Test Condition
C
C
C
E
B
C
EB(OFF)
EB(OFF)
C
C
C
B
B
B
B
= 1.0mA,
B
C
EB(OFF)
EB(OFF)
B
= 20mA,
E
= 150mA,
= 150mA,
B
B
B
B
B
= -1.0mA,
= 0
= 0
= 0
B
B
B
B
= -20mA,
= -150mA,
= -150mA,
= 15mA
CE
CE
CE
CE
B
CE
= 50mA
= 15mA
= 50mA
= 0
= 0
= 0
CE
CE
CE
CE
CE
B
B
B
= -15mA
B1
= -50mA
= -15mA
= -50mA
B1
= 1.0V
= 1.0V
= -2.0V
= 1.0V
= 1.0V
= 2.0V
= -1.0V
= -1.0V
= -1.0V
= -2.0V
= 15mA
= -15mA
= 0.4V
= 0.4V
= -0.4V
= -0.4V
© Diodes Incorporated
C
E
E
C
= 0
= 0
= 0
= 0
MMDT4413