MMDT3946_1 DIODES [Diodes Incorporated], MMDT3946_1 Datasheet - Page 3

• Manufacturer Part Number: MMDT3946_1
• Description: COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics, PNP 3906 Section
Ordering Information
Marking Information
Date Code Key
DS30123 Rev. 8 - 2
Notes:
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Code
Year
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Month
4. Short duration pulse test used to minimize self-heating effect.
Code
1998
J
MMDT3946-7-F
1999
K
Characteristic
Device
Jan
1
2000
L
(Note 5)
Feb
2001
2
M
March
2002
N
3
K46
2003
Apr
P
4
www.diodes.com
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
2004
C
h
h
NF
CEX
I
h
h
h
f
t
BL
obo
t
t
FE
t
ibo
oe
R
May
ie
re
fe
T
d
s
r
f
3 of 5
5
Packaging
SOT-363
K46 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2005
-0.65
S
@ T
Min
-5.0
100
100
250
Jun
-40
-40
2.0
0.1
3.0
60
80
60
30
6
A
= 25 C unless otherwise specified
2006
T
Jul
7
-0.25
-0.40
-0.85
-0.95
Max
300
400
225
-50
-50
4.5
4.0
10
12
10
60
35
35
75
2007
U
Aug
8
x 10
Unit
MHz
nA
nA
pF
pF
k
dB
ns
ns
ns
ns
V
V
V
V
V
S
2008
-4
V
Sep
9
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CE
CC
BE(off)
CC
S
3000/Tape & Reel
2009
= -10 A, I
= -1.0mA, I
= -10 A, I
= -100µA, V
= -1.0mA, V
= -10mA, V
= -50mA, V
= -100mA, V
= -10mA, I
= -50mA, I
= -10mA, I
= -50mA, I
= 1.0k
= I
W
= -30V, V
= -30V, V
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= 10V, I
= -20V, I
= -5.0V, I
= -3.0V, I
= -3.0V, I
B2
Shipping
Oct
= 0.5V, I
O
Test Condition
= -1.0mA
2010
C
C
X
E
f = 1.0kHz
B
B
B
B
C
C
B
EB(OFF)
EB(OFF)
C
C
= 0
= 0
= 1.0mA,
= -1.0mA
= -5.0mA
= -1.0mA
= -5.0mA
= -10mA,
CE
CE
CE
CE
CE
= 0
= -100 A,
= -10mA,
= -10mA,
B1
Nov
= -1.0V
= -1.0V
= -1.0V
= -1.0V
= -1.0V
N
= -1.0mA
2011
MMDT3946
Y
= -3.0V
= -3.0V
C
E
Dec
2012
= 0
= 0
D
Z