cxk591000m Sony Electronics, cxk591000m Datasheet - Page 5

• Manufacturer Part Number: cxk591000m
• Description: 131,072-word X 9-bit High Speed Cmos Static Ram
• Manufacturer: Sony Electronics

• Read cycle (WE = "H")
• Write cycle
Read cycle time
Address access time
Chip enable access time (CE1)
Chip enable access time (CE2)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE1, CE2)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE1, CE2)
Output disable to output in high Z (OE)
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE1, CE2)
Output active from end of write
Write to output in high Z
output voltage level.
referred to as output voltage levels.
t
t
HZ1
WHZ
, t
is defined as the time required for outputs to turn to high impedance state and is not referred to as
HZ2
and t
OHZ
Item
Item
are defined as the time required for outputs to turn to high impedance state and are not
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
Symbol
AA
CO1
CO2
OE
OH
LZ1
OLZ
HZ1
OHZ
Symbol
WC
AW
CW
DW
DH
WP
AS
WR
WR1
OW
WHZ
,
,
t
t
LZ2
HZ2
– 5 –
Min.
Min.
55
15
10
55
50
50
25
40
10
—
—
—
—
—
—
—
5
0
0
0
0
-55LL
-55LL
Max.
Max.
—
55
55
55
30
—
—
—
25
25
—
—
—
—
—
—
—
—
—
—
25
Min.
Min.
70
15
10
70
60
60
30
50
10
—
—
—
—
—
—
—
5
0
0
0
0
-70LL
-70LL
Max.
Max.
70
70
70
40
25
25
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Min.
Min.
100
100
15
10
70
70
40
60
10
—
—
—
—
—
—
—
5
0
0
0
0
CXK591000TM/YM/M
-10LL
-10LL
Max.
Max.
100
100
100
—
50
—
—
—
35
35
—
—
—
—
—
—
—
—
—
—
30
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns