DG211BDQ VISHAY [Vishay Siliconix], DG211BDQ Datasheet - Page 6
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DG211BDQ
Manufacturer Part Number
DG211BDQ
Description
Improved Quad CMOS Analog Switches
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.DG211BDQ.pdf
(8 pages)
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DG211B/212B
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
4-6
V
V
S
S
V
Off Isolation = 20 log
= +2 V
g
3 V
R
g
0V, 2.4 V
= 50
3 V
R
g
FIGURE 3. Off Isolation
S
IN
GND
C
IN
S
S
IN
GND
V
V
GND
S
O
+15 V
V+
+15 V
V+
V+
–15 V
V–
V
+15 V
O
–15 V
D
–15 V
= V
V–
V–
D
S
D
R
C
R
1 k
L
L
+ r
R
DS(on)
C
1000 pF
L
FIGURE 5. Charge Injection
L
FIGURE 2. Switching Time
R
V
C
35 pF
L
V
O
O
L
V
O
C = RF bypass
X
TALK
V
Isolation = 20 log
S
R
Switch
Output
Logic
g
Input
= 50
The charge injection in coulombs is Q = C
0V, 2.4 V
0V, 2.4 V
V
O
= measured voltage error due to charge injection
V
FIGURE 4. Channel-to-Channel Crosstalk
NC
3 V
0 V
V
IN
O
O
X
V
V
C
O
S
ON
S
IN
S
IN
1
2
1
2
GND
t
ON
50%
V+
OFF
V
90%
+15 V
O
–15 V
V–
S-00788—Rev. H, 24-Apr-00
Document Number: 70040
D
D
1
2
L
t
OFF
x V
C
ON
O
t
t
r
f
<20 ns
<20 ns
50
R
V
O
L