as29f010 Austin Semiconductor, Inc., as29f010 Datasheet - Page 7

• Manufacturer Part Number: as29f010
• Description: Uniform Sector 5.0v Flash Memory
• Manufacturer: Austin Semiconductor, Inc.

Autoselect Command Sequence
system to access the manufacturer and devices codes, and
determine whether or not a sector is protected. The Command
Definitions table shows the address and data requirements.
This method is an alternative to that shown in the Autoselect
Codes (High Voltage Method) table, which is intended for
PROM programmers and requires V
two unlock cycles, followed by the autoselect command. The
device then enters the autoselect mode, and the system may
read at any address any number of times, without initiating
another command sequence.
manufacturer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address (SA)
and the address 02h in returns 01h if that sector is protected, or
00h if it is unprotected. Refer to the Sector Address tables for
valid sector addresses.
autoselect mode and return to reading array data.
Byte Program Command Sequence
command sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not required
to provide further controls or timings. The device
automatically provides internally generated program pulses and
verify the programmed cell margin. The Command Definitions
take shows the address and data requirements for the byte
program command sequence.
device then returns to reading array data and addresses are no
longer latched. The system can determine the status of the
program operation by using DQ7 or DQ6. See “Write Operation
Status” for information on these status bits.
Embedded Program Algorithm are ignored.
sector boundaries. A bit cannot be programmed from a “0”
back to a “1”. Attempting to do so may halt the operation and
set DQ5 to “1”, or cause the Data\ Polling algorithm to indicate
the operation was successful. However, a succeeding read will
show that the data is still “0”. Only erase operations can
convert a “0” to a “1”.
Chip Erase Command Sequence
AS29F010
Rev. 2.2 09/07
The autoselect command sequence allows the host
The auto select command sequence is initiated by writing
A read cycle at address XX00h or retrieves the
The system must write the reset command to exit the
Programming is a four-bus-cycle operation. The program
When the Embedded Program algorithm is complete, the
Any commands written to the device during the
Programming is allowed in any sequence and across
Chip erase is a six-bus-cycle operation. The chip erase
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ID
on address bit A9.
7
command sequence is initiated by writing two unlock cycles,
followed by a set-up command. Two additional unlock write
cycles are then followed by the chip erase command, which in
turn invokes the Embedded Erase algorithm. The device does
not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any
controls or timings during these operations. The Command
Definitions table shows the address and data requirements for
the chip erase command sequence.
Erase algorithm are ignored.
operation by using DQ7 or DQ6. See “Write Operation Status”
for information on these status bits. When the Embedded Erase
algorithm is complete, the device returns to reading array data
and addresses are no longer latched.
See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and the Chip /Sector Erase
Operation Timings for timing waveforms.
FIGURE 1: PROGRAM OPERATION
NOTE:
command sequence.
Any commands written to the chip during the Embedded
The system can determine the status of the erase
Figure 2 illustrates the algorithm for the erase operation.
See the appropriate Command Definitions table for program
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS29F010
FLASH
FLASH
FLASH
FLASH
FLASH