SST29EE010-70-4C-EH SST [Silicon Storage Technology, Inc], SST29EE010-70-4C-EH Datasheet
SST29EE010-70-4C-EH
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SST29EE010-70-4C-EH Summary of contents
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... Mbit (128K x8) Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • ...
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... Write cycle. During the Erase operation, the only valid read is Toggle Bit. See Table 4 for the load sequence, Figure 10 for timing diagram, and Figure 19 for the flowchart Mbit Page-Write EEPROM SST29EE010 / SST29VE010 through A . Any byte 7 16 S71061-11-000 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Write Operation Status Detection The SST29EE/VE010 provide two software means to detect the completion of a Write cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ (DQ ). The End-of-Write detection mode is enabled after ...
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... See Table 4 for software command codes, Figure 12 for timing waveform, and Figure 18 for a flowchart. X-Decoder Y-Decoder and Page Latches Control Logic I/O Buffers and Data Latches 4 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 I RODUCT DENTIFICATION Address Data 0000H BFH 0001H ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 FIGURE SSIGNMENTS FOR A11 A13 4 A14 WE A16 10 A15 11 A12 FIGURE SSIGNMENTS FOR FIGURE SSIGNMENTS FOR ©2005 Silicon Storage Technology, Inc. ...
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... X can but no other value Device ID = 07H for SST29EE010 and 08H for SST29VE010 ©2005 Silicon Storage Technology, Inc. Functions To provide memory addresses. Row addresses define a page for a Write cycle. Column Addresses are toggled to load page data To output data during Read cycles and receive input data during Write cycles. ...
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... SST Manufacturer’ BFH, is read with SST29EE010 Device ID = 07H, is read with A SST29VE010 Device ID = 08H, is read with A 6. Alternate six-byte Software Product ID command code Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code sequence. For new designs, SST recommends that the three-byte command code sequence be used. © ...
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... C capable in both non-Pb and with-Pb solder versions. ° C for 10 seconds; please consult the factory for the latest information 4.5-5.5V 4.5-5. 2.7-3.6V 2.7-3.6V = 100 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 +0.5V DD +2.0V DD S71061-11-000 9/05 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 TABLE PERATING HARACTERISTICS Symbol Parameter I Power Supply Current DD Read Program and Erase I Standby V Current SB1 DD (TTL input) I Standby V Current SB2 DD (CMOS input) I Input Leakage Current LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage ...
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... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2005 Silicon Storage Technology, Inc OWER UP IMINGS Minimum Specification 10,000 100 100 10 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Minimum Units 100 µ T7.1 1061 Test Condition Maximum I/O ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 AC CHARACTERISTICS TABLE 10 EAD YCLE IMING Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...
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... This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2005 Silicon Storage Technology, Inc. P IMING ARAMETERS SST29EE010 Min 0.05 200 12 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 SST29LE/VE010 Max Min Max Units ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 ADDRESS A 16-0 CE# OE WE# HIGH-Z DQ 7-0 FIGURE EAD YCLE IMING Three-Byte Sequence for Enabling SDP ADDRESS A 16-0 5555 2AAA CE# OE# WE SW0 SW1 FIGURE 5: WE# C ONTROLLED ©2005 Silicon Storage Technology, Inc OLZ ...
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... DATA VALID T DS SW2 BYTE 0 BYTE AGE RITE YCLE IMING IAGRAM OEH BLCO D IAGRAM 14 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 T BLCO T WC BYTE 127 1061 F06.0 T OES D D# 1061 F07.0 S71061-11-000 9/05 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 ADDRESS A 16-0 CE# T OEH OE# WE FIGURE OGGLE IT IMING ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 FIGURE OFTWARE ATA ©2005 Silicon Storage Technology, Inc BLCO D IAGRAM Six-Byte Sequence for Disabling Software Data Protection ...
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... T BLC SW1 SW2 SW3 T D RASE IMING IAGRAM 5555 0000 IDA T BLC DEVICE ID = 07H for SST29EE010 SW1 SW2 = 08H for SST29VE010 R EAD 16 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 T SCE 5555 10 T BLCO SW4 SW5 1061 F10.0 0001 DEVICE ID 1061 F11 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Three-Byte Sequence for Software ID Exit and Reset ADDRESS A 14-0 5555 DQ 7-0 AA CE# OE WE# SW0 FIGURE 12 OFTWARE XIT AND ©2005 Silicon Storage Technology, Inc. 2AAA 5555 IDA T BLC SW1 SW2 R ESET 17 Data Sheet 1061 F12.0 ...
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... V LT (0.4 V) for a logic “0”. Measurement reference points for ILT (0.8 V). Input rise and fall times (10 EFERENCE AVEFORMS TO TESTER LOW 18 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 V HT OUTPUT V LT 1061 F13.0 ↔ 90%) are <10 ns. Note Test HT HIGH Test ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 See Figure 17 FIGURE 15 RITE LGORITHM ©2005 Silicon Storage Technology, Inc. Start Software Data Protect Write Command Set Page Address Set Byte Address = 0 Load Byte Data Increment Byte Address By 1 Byte No Address = 128? Yes Wait T BLCO ...
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... Page-Write Initiated Read a byte from page Read same byte No Does DQ 6 match? Yes Write Completed 20 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Data# Polling Page-Write Initiated Read DQ 7 (Data for last byte loaded true data? Yes Write Completed 1061 F16.0 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Software Data Protect Enable Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: A0H Address: 5555H Load 0 to 128 Bytes of page data Wait T BLCO Wait T WC SDP Enabled FIGURE 17 OFTWARE ATA © ...
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... Silicon Storage Technology, Inc. Software Product ID Exit & Reset Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: F0H Address: 5555H Pause 10 µs Return to normal operation C F OMMAND LOWCHARTS 22 1 Mbit Page-Write EEPROM SST29EE010 / SST29VE010 1061 F18.0 S71061-11-000 9/05 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 FIGURE 19 OFTWARE HIP ©2005 Silicon Storage Technology, Inc. Software Chip-Erase Command Sequence Write data: AAH Address: 5555H Write data: 55H Address: 2AAAH Write data: 80H Address: 5555H Write data: AAH Address: 5555H Write data: 55H ...
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... Device Density 010 = 1 Mbit Function E = Page-Write Voltage E = 4.5-5. 2.7-3.6V Product Series 29 = Page-Write Flash 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant” Mbit Page-Write EEPROM SST29EE010 / SST29VE010 S71061-11-000 9/05 ...
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... Note: The software Chip-Erase function is not supported by the industrial temperature part. Please contact SST if this function is required in an industrial temperature part. ©2005 Silicon Storage Technology, Inc. SST29EE010-70-4C-EH SST29EE010-70-4C-PH SST29EE010-70-4C-EHE SST29EE010-70-4C-PHE SST29EE010-90-4C-EH SST29EE010-90-4C-PH SST29EE010-90-4C-EHE SST29EE010-70-4I-EH ...
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... SIDE VIEW .112 .106 .029 .040 .020 R. x 30˚ .023 .030 MAX. .021 .013 .400 .032 BSC .026 .050 BSC .015 Min. .095 .075 .140 .125 (PLCC Mbit Page-Write EEPROM SST29EE010 / SST29VE010 BOTTOM VIEW R. .530 .490 .032 .026 32-plcc-NH-3 S71061-11-000 9/05 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Pin # 1 Identifier 12.50 12.30 0.70 0.50 14.20 13.80 Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. 32 ...
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... LEAD HIN MALL UTLINE SST ACKAGE ODE ©2005 Silicon Storage Technology, Inc. 18.50 18.30 20.20 19.80 (TSOP ACKAGE Mbit Page-Write EEPROM SST29EE010 / SST29VE010 1.05 0.95 0.50 BSC 8.10 0.27 7.90 0.17 0.15 0.05 DETAIL 1.20 max. 0.70 0.50 1mm 32-tsop-EH-7 S71061-11-000 0˚- 5˚ 9/05 ...
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... Mbit Page-Write EEPROM SST29EE010 / SST29VE010 Pin #1 Identifier .075 .065 Base Plane Seating Plane .050 .015 .080 .065 .070 .045 Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. ...
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... Removed 3V device and associated MPNs: refer to EOL Product Data Sheet S71061(01) • Added non-Pb MPN for SST29EE010 PDIP • Added RoHS compliance information on page 1 and in the “Product Ordering Information” on page 24 • Updated the solder reflow temperature to the “Absolute Maximum Stress Ratings” on page 8. Silicon Storage Technology, Inc. • ...