SST12LP07-QVCE SST [Silicon Storage Technology, Inc], SST12LP07-QVCE Datasheet - Page 11
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SST12LP07-QVCE
Manufacturer Part Number
SST12LP07-QVCE
Description
2.4 GHz High-Power, High-Gain Power Amplifier
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
1.SST12LP07-QVCE.pdf
(14 pages)
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Part Number
Manufacturer
Quantity
Price
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Part Number:
SST12LP07-QVCE
Manufacturer:
YEONHO
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Part Number:
SST12LP07-QVCE
Manufacturer:
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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP07
©2006 Silicon Storage Technology, Inc.
FIGURE 12: Typical Schematic for High-Power/High-Efficiency 802.11b/g Applications
VREG
RF
IN
47pF
1.5 nH
R1 = 110 Ω
50 Ω / 0–20 mil
22 pF
Suggested operation conditions:
* Suggested for robustness under input overdrive condition
R2 = 50 Ω*
1. V
2. Center slug to RF ground
3. VREG = 2.85V with R1=110Ω
1
2
3
4
when working with some transceivers.
CC
16
5
= 3.3V
0.1 µF
Bias Circuit
15
6
11
14
7
0.1 µF
10 pF
13
8
12
11
10
6.8 nH
9
50Ω / 60–70 mil
0.1 µF
Det
2.0 pF
Preliminary Specifications
10 µF
47 pF
1321 Schematic 1.1
RF
S71321-00-000
OUT
V
CC
5/06