SB1H100HE3/73 VISHAY [Vishay Siliconix], SB1H100HE3/73 Datasheet - Page 2

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SB1H100HE3/73

Manufacturer Part Number
SB1H100HE3/73
Description
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SB1H90 & SB1H100
Vishay General Semiconductor
Notes:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current at rated V
THERMAL CHARACTERISTICS (T
PARAMETER
Maximum thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
SB1H100-E3/54
SB1H100-E3/73
SB1H100HE3/54
SB1H100HE3/73
A
= 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Figure 1. Forward Current Derating Curve
25
(1)
(1)
50
Case Temperature (°C)
75
UNIT WEIGHT (g)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
(1)
100
For technical questions within your region, please contact one of the following:
0.34
0.34
0.34
0.34
125
R
(2)
(1)
150
I
I
I
I
F
F
F
F
175
PREFERRED PACKAGE CODE
= 1.0 A
= 1.0 A
= 2.0 A
= 2.0 A
TEST CONDITIONS
A
= 25 °C unless otherwise noted)
200
A
= 25 °C unless otherwise noted)
T
T
T
T
T
T
J
J
J
J
J
J
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
54
73
54
73
SYMBOL
SYMBOL
Figure 2. Typical Instantaneous Forward Characteristics
R
0.01
R
100
V
0.1
10
I
θJA
θJL
R
F
1
0
BASE QUANTITY
T
J
0.2
= 150 °C
5500
3000
5500
3000
Instantaneous Forward Voltage (V)
0.4
SB1H90
SB1H90
T
J
0.6
= 175 °C
T
J
= 25 °C
0.8
T
J
0.77
0.62
0.86
0.70
= 100 °C
1.0
0.5
13" diameter paper tape and reel
13" diameter paper tape and reel
57
15
T
J
1.0
= 125 °C
Ammo pack packaging
Ammo pack packaging
SB1H100
SB1H100
DELIVERY MODE
1.2
Document Number: 88716
1.4
Revision: 19-May-08
1.6
1.8
UNIT
UNIT
°C/W
mA
µA
V

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