upa828td Renesas Electronics Corporation., upa828td Datasheet

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upa828td

Manufacturer Part Number
upa828td
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA828TD.pdf (8 pages)
<R>
Document No. PU10402EJ03V0DS (3rd edition)
Date Published February 2008 NS
Printed in Japan
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
• Built-in 2 transistors (2 × 2SC5436)
• 6-pin lead-less minimold (M16, 1208 PKG)
BUILT-IN TRANSISTORS
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
3-pin thin-type ultra super minimold part No.
μ
μ
PA828TD
PA828TD-T3
Part Number
Remark To order evaluation samples, contact your nearby sales office.
f
NF = 1.3 dB TYP. @ V
T
= 9.0 GHz TYP., ⏐S
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The unit sample quantity is 50 pcs.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
μ
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
Order Number
PA828TD-A
PA828TD-T3-A
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
21e
CE
⏐
= 1 V, I
2
= 7.5 dB TYP. @ V
6-pin lead-less minimold
(M16, 1208 PKG) (Pb-Free)
C
= 3 mA, f = 2 GHz
The mark <R> shows major revised points.
Package
DATA SHEET
CE
= 1 V, I
NPN SILICON RF TWIN TRANSISTOR
2SC5436
C
Q1, Q2
= 10 mA, f = 2 GHz
50 pcs (Non reel)
10 kpcs/reel
Quantity
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base)
face the perforation side of the tape
μ
Supplying Form
PA828TD
2003, 2008

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upa828td Summary of contents

Page 1

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • Built-in low phase distortion transistor suited for OSC applications = 9.0 GHz TYP., ⏐S ⏐ 7.5 dB TYP ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Collector to Base Voltage V Collector to Emitter Voltage V Emitter to Base Voltage V Collector Current Total Power Dissipation P tot Junction Temperature Storage Temperature T × 1.0 mm (t) glass epoxy PCB ...

Page 3

TYPICAL CHARACTERISTICS (T <R> TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Mounted on Glass Epoxy PCB (1.08 cm 250 200 2 Elements in total 180 150 Per Element 100 Ambient Temperature T COLLECTOR CURRENT ...

Page 4

DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz ...

Page 5

INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current I (mA) C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 16 MSG MAG 12 ...

Page 6

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current I (mA) C NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 ...

Page 7

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) 1.0±0.05 +0.07 0.8 –0. PIN CONNECTIONS Data Sheet PU10402EJ03V0DS μ PA828TD (Top View Collector (Q1) ...

Page 8

The information in this document is current as of February, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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