upa863td Renesas Electronics Corporation., upa863td Datasheet - Page 3

• Manufacturer Part Number: upa863td
• Description: Npn Silicon Rf Transistor With 2 Different Elements In A 6-pin Lead-less Minimold
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
(1) Q1
(2) Q2
h
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
FE
h
h
Notes 1. Pulse measurement: PW
FE
FE
Value of Q1
Value of Q2
Marking
CLASSIFICATION
Rank
2. Collector to base capacitance when the emitter grounded
Parameter
Parameter
100 to 145
70 to 140
FB
xC
Symbol
Symbol
h
h
C
C
FE
S
FE
S
S
I
I
I
I
re
re
NF
NF
CBO
EBO
CBO
EBO
f
f
f
21e
21e
21e
T
Note 2
T
T
Note 2
Note 1
Note 1
350 s, Duty Cycle
2
2
2
A
V
V
V
V
V
V
Z
V
V
V
V
V
V
V
V
V
Z
V
= +25 C)
S
S
CB
BE
CE
CE
CE
CE
CB
CB
BE
CE
CE
CE
CE
CE
CE
CB
Data Sheet P15686EJ1V0DS
= Z
= Z
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
opt
opt
Test Conditions
C
Test Conditions
C
E
C
C
C
C
E
C
C
C
C
C
C
= 0 mA
= 0 mA
= 10 mA
= 10 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 0 mA
= 0 mA
= 5 mA
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
E
E
= 0 mA, f = 1 MHz
= 0 mA, f = 1 MHz
2%
MIN.
MIN.
10.0
100
7.0
3.0
5.0
3.0
4.5
70
TYP.
TYP.
12.0
110
120
9.0
1.3
0.4
4.5
6.5
4.0
5.5
1.9
0.6
MAX.
MAX.
100
100
140
600
600
145
2.0
0.7
2.5
0.8
PA863TD
GHz
GHz
GHz
Unit
Unit
nA
nA
dB
dB
pF
nA
nA
dB
dB
dB
pF
3