upa606t Renesas Electronics Corporation., upa606t Datasheet
upa606t
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upa606t Summary of contents
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N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The PA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET elements in package the same size as SC-59 • ...
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ELECTRICAL CHARACTERISTICS (T PARAMETER SYMBOL Drain Cut-off Current I DSS Gate Leakage Current I GSS Gate Cut-off Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State Resistance R DS(on)1 Drain to Source On-State Resistance R DS(on)2 ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 T - Case Temperature - ˚C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 Pulsed ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ...
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REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide PA606T Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...