DB4M SY [Changzhou Shunye Electronics Co.,Ltd.], DB4M Datasheet - Page 2

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DB4M

Manufacturer Part Number
DB4M
Description
SILICON BIDIRECTIONAL DIACS
Manufacturer
SY [Changzhou Shunye Electronics Co.,Ltd.]
Datasheet
RATINGS AND CHARACTERISTIC CURVES
FIG.5--RELATIVE VARIATION OF V
FIG.3-- TEST CIRCUIT SEE FIG.2 ADJUST R FOR I
10%
FIG.1--VOLTAGE-CURRENT CHARACTERISTIC CURVE
1.08
1.04
1.02
1.00
1.06
-V
90%
25
TEMPERATURE(TYPICAL VALUES)
VBO(T J =25
VBO(T J )
I
I
BO
B
tr
50
)
10mA
-I
+I
F
F
75
I
P
BO
0.5V
VERSUS JUNCTION
BO
V
BO
T
100
J
(
)
+V
P
=0.5A
125
I
TRM
2
FIG.6--PEAK PULSEE CURRENT VERENT VERSUS
0.1
0.01
1
FIG.4--POWER DISSIPATION VERSUS AMBIENT
160
140
120
100
FIG.2--TEST CIRCUIT FOR OUTPUT VOLTAGE
40
20
80
60
0
(A)
10
0
P(mW)
220V
60Hz
PULSE DURATION(MAXIMUM VALUES)
10
TEMPERATURE (MAXIMUM VALUES)
Tamb( ℃ )
tp( s)
20 30
10KΩ          500KΩ                 D.U.T
40 50
100
60
70
80
0.1 F
1000
90
f=100Hz
T J initial=25℃
100 110 120 130
DB3M.DB4M
V o
10000
R=20 Ω

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