TS6001AIG325T TOUCHSTONE [Touchstone Semiconductor Inc], TS6001AIG325T Datasheet - Page 10

• Manufacturer Part Number: TS6001AIG325T
• Description: A 7ppm/oC, 0.08 o/o Precision +2.5V Voltage Reference in SOT23
• Manufacturer: TOUCHSTONE [Touchstone Semiconductor Inc]

TS6001
For example, if V
supply voltage level for the circuit is 35V. With a
2.1kΩ load and the TS6001’s supply current of 35µA
(max), this circuit supplies approximately a 1.23-mA
current to the load.
In many current source applications, the possibility
of an output short-circuit condition - whether
transient or sustained - exists. It is recommended to
test thoroughly for either scenario to prevent the
possibility that the TS6001 would be exposed to a
total voltage from its IN terminal to GND terminal
higher than its absolute maximum rating of 13.5V.
Boosting the TS6001’s Output Current Drive
While the TS6001 is capable of sourcing up to
500µA with excellent load regulation, there are
applications where tight load regulation is required at
much higher output load currents. By adding a
general-purpose, industry-standard PNP transistor
and one resistor to the TS6001’s basic configuration
as shown in Figure 7, increasing a precision
reference’s
straightforward. Using a 2N2905 PNP transistor and
a 1.5kΩ resistor, the TS6001 is able to maintain
Page 10
Figure 6: Using the TS6001-2.5 in a High-Input
Figure 7: Boosting the TS6001’s Output Current
Voltage Floating Current Source.
with an External PNP Transistor.
output
SY
is 0V, then the upper input
source
current
drive
is
excellent load regulation
currents up to 150mA. If the application circuit is
designed to operate across a wide temperature
range, it is recommended that circuit performance is
thoroughly evaluated across the PNP transistor’s
beta (β, or current gain) distribution. When the PNP
transistor’s current gain is a minimum, the increase
in base current must be absorbed by the TS6001 for
a given load current. For higher output load currents,
higher output power PNP transistors can be used so
long as good thermal management techniques are
applied and transistor current-gain vs ambient
temperature behavior is evaluated.
while sourcing
TS6001DS r1p0
RTFDS
load