STB8444 SAMHOP [SamHop Microelectronics Corp.], STB8444 Datasheet - Page 2

• Manufacturer Part Number: STB8444
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: SAMHOP [SamHop Microelectronics Corp.]

4
STB/P8444
ELECTRICAL CHARACTERISTICS
Symbol
OFF CHARACTERISTICS
BV
ON CHARACTERISTICS
R
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Q
Q
Q
I
I
V
g
t
t r
t
t f
V
Notes
DSS
GSS
D(ON)
D(OFF)
a.Maximum wire current carrying capacity is 80A.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
FS
DS(ON)
ISS
OSS
RSS
GS(th)
g
gs
gd
SD
DSS
Drain-Source Breakdown Voltage
Parameter
Drain-Source On-State Resistance
Output Capacitance
Gate-Source Charge
Gate-Drain Charge
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
J
=25
°
C,L=0.5mH,R
_
G
=25
c
Ω
c
,I
AS
=35A,V
( T
_
A
DD
=25 ° C unless otherwise noted )
Conditions
V
V
V
V
V
V
V
V
V
V
V
f=1.0MHz
V
I
V
R
D
= 20V.(See Figure13)
GS
DS
GS
GS
DS
DS
DS
DS
DS
GS
GS
DD
GS
GEN
=1A
=0V , I
=32V , V
=10V , I
=V
=5V , I
=20V,V
=20V,I
=20V,I
=10V
=0V,I
= ±20V , V
=20V
=10V
=6 ohm
GS
2
S
, I
D
=10A
D
D
D
=250uA
D
GS
=80A
=25A,V
=25A,
D
GS
=250uA
=80A
=0V
=0V
DS
=0V
GS
=10V
Min
40
2
www.samhop.com.tw
6500
Typ
162
185
940
500
185
110
2.8
3.5
0.8
20
50
20
26
±100
Max
1.3
4.8
1
4
Mar,26,2008
Ver 1.0
m ohm
Units
uA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V
S
V