qm30tf-hb ETC-unknow, qm30tf-hb Datasheet - Page 4

• Manufacturer Part Number: qm30tf-hb
• Description: Mitsubishi Transistor Modules
• Manufacturer: ETC-unknow

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
10
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
–1
0
7
5
3
2
5
3
2
7
5
3
2
10
1
0
7
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
–1
TRANSIENT THERMAL IMPEDANCE
–3
0
T
0
BASE REVERSE CURRENT –I
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
I
V
I
C
2
C
2
2 3 45 7
B1
=25°C
t
t
CC
=30A
SWITCHING TIME VS. BASE
s
f
3
2 3 4 5 7
=60mA
3
=300V
4
4
T
T
5
5
j
j
CURRENT (TYPICAL)
=25°C
=125°C
7
7
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
4 5 7
4
4
0
5
5
7
7
10
2 3 4 5 7
10
10
–1
2
2
2
2
3
3
B2
4
4
5
5
(A)
CE
7
7
10
10
(V)
10
1
0
3
100
10
10
10
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
7
5
4
3
2
7
5
4
3
2
0
0
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
0.4
COLLECTOR-EMITTER VOLTAGE V
0 100
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
j
COLLECTOR-EMITTER REVERSE
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
0.8
COLLECTOR
DISSIPATION
200
40
300 400 500
60
I
1.2
B2
–V
=–3.0A
CEO
80 100 120 140
1.6
(V)
SECOND
BREAKDOWN
AREA
QM30TF-HB
600 700
I
B2
T
T
C
2.0
j
j
=25°C
=125°C
INSULATED TYPE
=–0.6A
( C)
CE
160
800
2.4
(V)
Feb.1999