qm10ha-hb ETC-unknow, qm10ha-hb Datasheet - Page 4

• Manufacturer Part Number: qm10ha-hb
• Description: Mitsubishi Transistor Modules
• Manufacturer: ETC-unknow

10
10
10
10
10
10
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
–1
10
–1
FORWARD BIAS SAFE OPERATING AREA
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
10
10
2
1
0
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
–3
0
BASE REVERSE CURRENT –I
0
T
NON–REPETITIVE
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
–2
1
1
TIME (s)
2
2
2
10
3
3
3
DC
0
5
5
5
V
I
I
1ms
100µs 50µs
B1
C
7
7
7
CC
t
=10A
s
2 3 4 5 7
10
10
10
=60mA
=300V
t
–1
f
2
T
T
2
j
j
2
2
=25°C
=125°C
3
3
B2
500ms
5
5
(A)
200µs
CE
7
7
10
(V)
10
10
1
3
0
100
10
10
10
20
16
12
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
8
4
0
0
7
5
4
3
2
7
5
4
3
2
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
0.8
COLLECTOR
DISSIPATION
200
40
I
B2
60
1.2
=–2.0A
–V
CEO
400
80
(V)
1.6
100 120
SECOND
BREAKDOWN
AREA
QM10HA-HB
600
T
T
I
T
j
j
B2
C
=25°C
=125°C
2.0
j
=125°C
INSULATED TYPE
=–0.5A
( C)
140
CE
800
160
2.4
(V)
Feb.1999