FRS140R INTERSIL [Intersil Corporation], FRS140R Datasheet - Page 3

• Manufacturer Part Number: FRS140R
• Description: 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

Post-Radiation Electrical Specifications
NOTES:
1. Pulse test, 300 s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/25/90 on TA 17641 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
Drain-Source
Breakdown Volts
Gate-Source
Threshold Volts
Gate-Body
Leakage Forward
Gate-Body
Leakage Reverse
Zero-Gate Voltage
Drain Current
Drain-Source
On-State Volts
Drain-Source
On Resistance
PA 19401
PARAMETER
(Note 4, 6)
(Note 5, 6)
(Note 4, 6)
(Note 3, 5, 6)
(Note 4, 6)
(Note 5, 6)
(Note 2, 4, 6)
(Note 2, 5, 6)
(Note 4, 6)
(Note 5, 6)
(Note 1, 4, 6)
(Note 1, 5, 6)
(Note 1, 4, 6)
(Note 1, 5, 6)
SYMBOL
RDS(on)
RDS(on)
VDS(on)
VDS(on)
VGS(th)
VGS(th)
BVDSS
BVDSS
IGSSR
IGSSR
IGSSF
IGSSF
IDSS
IDSS
FRS140D, FRS140R, FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
FRS140D, R
FRS140H
T
C
TYPE
= +25
o
4-3
C, Unless Otherwise Specified
VGS = 0, ID = 1mA
VGS = 0, ID = 1mA
VGS = VDS, ID = 1mA
VGS = VDS, ID = 1mA
VGS = 20V, VDS = 0
VGS = 20V, VDS = 0
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0
VGS = 0, VDS = 80V
VGS = 0, VDS = 80V
VGS = 10V, ID = 17A
VGS = 16V, ID = 17A
VGS = 10V, ID =11A
VGS = 14V, ID =11A
TEST CONDITIONS
MIN
100
2.0
1.5
95
-
-
-
-
-
-
-
-
-
-
LIMITS
0.145
0.218
MAX
2.59
3.89
100
200
100
200
100
4.0
4.5
25
-
-
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
A
A