2mbi400u4h-170 Fuji Electric holdings CO.,Ltd, 2mbi400u4h-170 Datasheet - Page 9

• Manufacturer Part Number: 2mbi400u4h-170
• Description: Igbt Modules
• Manufacturer: Fuji Electric holdings CO.,Ltd

1000.0
1000
1000
100.0
800
600
400
200
800
600
400
200
10.0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
0
0
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=15V / chip
10
Tj= 25°C / chip
VGE=20V 15V
2
2
Tj=25°C
3
3
20
12V
Coes
Cres
Cies
Tj=125°C
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
1000
8
6
4
2
0
800
600
400
200
Collector current vs. Collector-Emitter voltage (typ.)
5
0
0
0
MS5F6098
Vcc=900V， Ic=400A，Tj= 25°C
Dynamic Gate charge (typ.)
VCE
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
10
1
Tj=25°C / chip
Gate charge : Qg [nC]
500
Tj= 125°C/ chip
2
15
VGE=20V15V
1000
3
VGE
20
Ic=800A
Ic=400A
Ic=200A
4
H04-004-03a
9
12V
10V
8V
1500
13
25
5
a