2mbi150u4h-120 Fuji Electric holdings CO.,Ltd, 2mbi150u4h-120 Datasheet - Page 3

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2mbi150u4h-120

Manufacturer Part Number
2mbi150u4h-120
Description
Igbt Module U Series 1200v / 150a / 2 In One Package
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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Part Number:
2MBI150U4H-120
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2MBI150U4H-120
10000
10000
1000
1000
40
30
20
10
100
100
0
10
10
1
0
1
Vcc=600V, Ic=150A, VGE=±15V, Tj=125
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=25
Vcc=600V, Ic=150A, VGE=±15V,
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
50
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
100
10
10
ton
150
tr
Eon
Eoff
Err
ton
toff
tf
toff
200
100
100
Tj=25
tr
tf
250
o
o
o
C
C
C
1000
300
1000
3 3
10000
1000
400
300
200
100
25
20
15
10
100
5
0
10
0
0
+VGE=15V, -VGE <= 15V, RG >= 4.7Ω,
0
0
Vcc=600V, VGE=±15V, RG=4.7Ω, Tj=125
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
50
Collector-Emitter voltage : VCE [ V ]
50
Vcc=600V, VGE=±15V, RG=4.7Ω
400
Collector current : Ic [ A ]
Collector current : Ic [ A ]
100
100
150
150
800
200
200
Eon(25
tr
1200
ton
toff
tf
250
Tj <= 125
Eoff(125
Eon(125
Err(125
Eoff(25
Err(25
250
o
C)
IGBT Modules
o
C
o
300
C)
o
o
1600
C)
C)
o
o
o
C)
C)
300
C

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