TD62001APG TOSHIBA [Toshiba Semiconductor], TD62001APG Datasheet - Page 4

• Manufacturer Part Number: TD62001APG
• Description: TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Ooutput leakage current
Collector−emitter saturation voltage
DC current transfer ratio
Input current (output on)
Input current (output off)
Input voltage (output on)
Clamp diode reverse current
Clamp diode forward voltage
Input capacitance
Turn−on delay
Turn−off delay
Characteristics
TD62002
TD62003
TD62004
TD62002
TD62003
TD62004
(Ta = 25°C unless otherwise noted)
V
I
V
Symbol
I
IN (OFF)
IN (ON)
CE (sat)
IN (ON)
I
t
h
C
t
CEX
OFF
V
ON
I
FE
R
IN
F
Circuit
Test
―
1
2
2
3
4
5
6
7
8
8
4
V
V
I
I
I
V
V
V
V
I
V
h
V
V
I
V
C
V
C
OUT
OUT
OUT
OUT
F
FE
CE
CE
CE
IN
IN
IN
CE
R
R
OUT
L
OUT
L
= 350 mA
= 15 pF
= 15 pF
= 50 V, Ta = 25°C
= 50 V, Ta = 85°C
= 20 V, I
= 2.4 V, I
= 9.5 V, I
= 800
= 50 V, Ta = 25°C
= 50 V, Ta = 85°C
= 2 V, I
= 2 V
= 350 mA, I
= 200 mA, I
= 100 mA, I
= 500 mA, Ta = 85°C
= 50 V, R
= 50 V, R
Test Condition
OUT
OUT
OUT
OUT
I
I
I
I
I
I
OUT
OUT
OUT
OUT
OUT
OUT
L
L
= 350 mA
IN
IN
IN
= 350 mA
= 125 W
= 125 W
= 350 mA
= 350 mA
= 350 mA
= 200 mA
= 350 mA
= 200 mA
= 350 mA
= 200 mA
= 500 mA
= 350 mA
= 250 mA
TD62001~004APG/AFG
1000
Min
50
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
1.3
1.1
0.9
1.1
0.4
0.8
0.1
0.2
65
15
―
―
―
―
―
―
―
―
―
―
―
―
2002-12-11
13.7
11.4
Max
100
100
1.6
1.3
1.1
1.7
0.7
1.2
2.6
2.0
4.7
4.4
2.0
50
50
―
―
―
―
―
Unit
mA
mA
mA
mA
pF
ms
V
V
V