VS-MUR1620CT-N3 VISHAY [Vishay Siliconix], VS-MUR1620CT-N3 Datasheet - Page 5
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VS-MUR1620CT-N3
Manufacturer Part Number
VS-MUR1620CT-N3
Description
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.VS-MUR1620CT-N3.pdf
(8 pages)
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Manufacturer
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Revision: 11-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
through zero crossing
RRM
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
- peak reverse recovery current
F
to point where a line passing
Fig. 10 - Reverse Recovery Waveform and Definitions
Fig. 9 - Reverse Recovery Parameter Test Circuit
RRM
and 0.50 I
(1)
adjust
dI
VS-MUR1620CTPbF, VS-MUR1620CT-N3
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
t
a
V
(2)
5
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
/dt - peak rate of change of
b
RRM
dI
www.vishay.com/doc?91000
0.5 I
Q
(rec)M
rr
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
x I
(5)
2
RRM
Vishay Semiconductors
rr
DiodesEurope@vishay.com
rr
Document Number: 94078