VS-60CPU02-N3 VISHAY [Vishay Siliconix], VS-60CPU02-N3 Datasheet - Page 4

• Manufacturer Part Number: VS-60CPU02-N3
• Manufacturer: VISHAY [Vishay Siliconix]

Note
(1)
Revision: 26-Jan-12
Formula used: T
Pd = Forward power loss = I
Pd
REV
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Fig. 7 - Typical Reverse Recovery Time vs. dI
= Inverse power loss = V
70
60
50
40
30
20
10
100
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C
= T
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
I
F
- (Pd +Pd
I
F
= 30 A, T
= 30 A, T
F(AV)
dI
(1) dI
(2) I
(3) t
0
F
R1
/dt (A/µs)
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
J
REV
through zero crossing
RRM
rr
x V
I
J
= 125 °C
F
F
x I
- reverse recovery time measured
= 25 °C
/dt - rate of change of current
) x R
FM
- peak reverse recovery current
R
(1 - D); I
F
at (I
to point where a line passing
thJC
Fig. 10 - Reverse Recovery Waveform and Definitions
F(AV)
Fig. 9 - Reverse Recovery Parameter Test Circuit
;
RRM
R
/D) (see fig. 6);
at V
and 0.50 I
(1)
adjust
F
dI
R1
/dt
F
/dt
dI
= Rated V
1000
F
/dt
RRM
L = 70 μH
G
t
a
R
V
(2)
4
(3)
R
= 200 V
VS-60CPU02-F, VS-60CPU02-N3
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
/dt - peak rate of change of
b
RRM
1000
dI
100
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0.5 I
Q
10
Fig. 8 - Typical Stored Charge vs. dI
(rec)M
rr
100
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
x I
(5)
I
2
F
RRM
= 30 A, T
Vishay Semiconductors
rr
I
F
= 30 A, T
J
[e-mail]
dI
= 125 °C
rr
F
/dt (A/µs)
J
Document Number: 94657
= 25 °C
F
/dt
1000