BAT54W-V_10 VISHAY [Vishay Siliconix], BAT54W-V_10 Datasheet - Page 2

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BAT54W-V_10

Manufacturer Part Number
BAT54W-V_10
Description
Small Signal Schottky Diode
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
BAT54W-V
Vishay Semiconductors
Electrical Characteristics
T
Note
1)
Typical Characteristics
T
www.vishay.com
2
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
amb
amb
Pulse test: t
Figure 2. Typical Capacitance vs. Reverse Applied Voltage
Figure 1. Typical Forward Current vs. Forward Voltage vs.
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
18867
18868
1000
Parameter
0.01
100
0.1
14
12
10
10
p
8
6
4
2
0
1
< 300 µs, θ < 2 %
0
0
1)
1)
T
j
= 125 °C
0.2
4
Various Temperatures
V
V
F
R
0.4
25 °C
- Forward Voltage (V)
8
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Reverse Voltage (V)
- 40 °C
For technical questions within your region, please contact one of the following:
0.6
12
I
0.8
F
16
= I
R
1
20
tested with 100 µA pulses
= 10 mA; I
V
R
1.2
24
Test condition
= 1 V, f = 1 MHz
I
I
I
I
F
F
V
I
F
F
F
= 100 mA
R
= 0.1 mA
= 10 mA
= 30 mA
1.4
= 1 mA
R
28
= 25 V
= 1 mA; R
L
= 100 Ω
Figure 3. Typical Reverse Current vs. Reverse Voltage vs.
18869
Symbol
1000
V
0.01
100
C
V
V
V
V
V
0.1
(BR)
I
t
10
DiodesEurope@vishay.com
R
rr
F
F
F
F
F
D
1
0
Various Temperatures
5
Min.
30
V
T
j
R
= 125 °C
- Reverse Voltage (V)
10
100 °C
75 °C
50 °C
25 °C
Typ.
15
Document Number 85666
20
Max.
240
320
400
500
800
10
2
5
Rev. 1.3, 05-Aug-10
25
30
Unit
mV
mV
mV
mV
mV
µA
pF
ns
V

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