UGB8CT GE [General Semiconductor], UGB8CT Datasheet - Page 2

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UGB8CT

Manufacturer Part Number
UGB8CT
Description
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Manufacturer
GE [General Semiconductor]
Datasheet
0.01
100
40
30
20
10
60
50
8.0
6.0
4.0
2.0
0.1
10
12
10
0
0
1
0
0.4
0
I
V
F
R
=4.0A
=30V
FIG. 1 - FORWARD CURRENT DERATING
RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT
25
25
INSTANTANEOUS FORWARD VOLTAGE,
FIG. 5 - REVERSE SWITCHING
JUNCTION TEMPERATURE, °C
0.6
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
CASE TEMPERATURE, °C
50
50
CHARACTERISTICS
di/dt= 150A/ s
0.8
RESISTIVE OR INDUCTIVE LOAD
75
75
CURVE
VOLTS
100
1.0
100
T
PULSE WIDTH=300 s
1% DUTY CYCLE
125
125
J
=25°C
1.2
di/dt=100A/ s
di/dt=20A/ s
di/dt=50A/ s
di/dt=100A/ s
di/dt=50A/ s
di/dt=150A/ s
di/dt=20A/ s
150
150
1.4
Q
t
rr
rr
175
175
1.6
100
1,000
0.1
10
100
1,000
0.01
1
10
0.01
100
0.1
10
1
1
0
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
T
T
T
J
J
PERCENT OF RATED PEAK REVERSE
J
=25°C
=125°C
=100°C
0.1
20
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE, VOLTS
FORWARD SURGE CURRENT
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
40
VOLTAGE, %
T
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
C
10
=100 C
60
10
T
f=1.0 MH
Vsig=50mVp-p
J
=25°C
80
Z
100
100
100

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