CMPT591E_10 CENTRAL [Central Semiconductor Corp], CMPT591E_10 Datasheet

CMPT591E_10

Manufacturer Part Number

CMPT591E_10

Description

ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

Manufacturer

CENTRAL [Central Semiconductor Corp]

Datasheet

1.CMPT591E_10.pdf (2 pages)

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♦

FEATURED ENHANCED SPECIFICATIONS:

♦

MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Continuous Base Current

Peak Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

V BE(ON)

h FE

f T

C ob

♦ Enhanced specification

V CE(SAT) @ 1.0A = 0.6V MAX (from 0.4V MAX)

h FE @ 500mA = 200 MIN (from 100 MIN)

ENHANCED SPECIFICATION

PNP SILICON TRANSISTOR

SURFACE MOUNT

SOT-23 CASE

CMPT591E

TEST CONDITIONS

V CB =60V

V EB =4.0V

I C =100µA

I C =10mA

I E =100µA

I C =500mA, I B =50mA

I C =1.0A, I B =100mA

V CE =5.0V, I C =1.0A

V CE =5.0V, I C =1.0mA

V CE =5.0V, I C =500mA

V CE =5.0V, I C =1.0A

V CE =5.0V, I C =2.0A

V CE =10V, I C =50mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT591E type is

an Enhanced version of the industry standard 591 PNP

silicon transistor. This device is manufactured by the

epitaxial planar process and epoxy molded in an

SOT-23 surface mount package. The CMPT591E

features Low V CE(SAT) , high h FE, and has been

designed for high current general purpose amplifier

applications.

MARKING CODE: C59

COMPLEMENTARY TYPE: CMPT491E

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

I CM

Θ JA

MIN

200

150

P D

5.0

I C

I B

-65 to +150

MAX

0.20

0.40

200

350

357

100

600

5.0

1.0

2.0

1.1

1.0

w w w. c e n t r a l s e m i . c o m

R3 (27-January 2010)

UNITS

°C/W

MHz

°C

Related parts for CMPT591E_10

CMPT591E_10 Summary of contents

Page 1

CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: ♦ V CE(SAT) @ 1.0A = 0.6V MAX (from 0.4V MAX) ♦ 500mA = 200 MIN (from 100 MIN) MAXIMUM RATINGS =25°C) ...

Page 2

CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C59 ...

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